Polarization imaging of imperfect m-plane GaN surfaces

GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 Å and the full-width-at-half-maximum value of the x-ray rocking curve for 101̄0 diffraction of m-plane GaN epilayer w...

Morphology and surface reconstructions of m-plane GaN

M-plane GaN(1 1 00) is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 1 00) GaN films are obtained, with a slate like surface morphology. On the GaN(1 1 00) surfaces, reconstructions with symmetry of c(2x2) and approximate "4×5" are found under...

Optical and structural studies of homoepitaxially grown m-plane GaN

Reconstruction of Specular Surfaces using Polarization Imaging

Traditional intensity imaging does not offer a general approach for the perception of textureless and specular reflecting surfaces. Intensity based methods for shape reconstruction of specular surfaces rely on virtual (i.e. mirrored) features moving over the surface under viewer motion. We present a novel method based on polarization imaging for shape recovery of specular surfaces. This method ...

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10 18 cm -3 to well above 10 19 cm -3 . The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV ...